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High-Performance PPA for Next-Generation IGBT Semiconductors

BASF’s Ultramid Advanced N3U42 G6 is tailored to enhance robustness, long-term performance and reliability.

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Source: BASF

Source: BASF

A polyphthalamide (PPA) that is especially suited for manufacturing housings of insulated-gate bipolar transistor (IGBT) semiconductors is newly available from BASF. Ultramid Advanced N3U41 G6 is said to address the growing demand for high-performance, reliable electronic components, for example electric vehicles, high-speed trains, smart manufacturing and the generation of renewable energy. Due to its chemical resistance and dimensional stability, the Ultramid Advanced N grade enhances the robustness, long-term performance and reliability of these IGBTs, thus meeting the growing need for energy saving, higher power density and increased efficiency. 

In today’s IGBTs, BASF’s Ultradur PBT is widely used. The new PPA is designed to meet the stringent requirements of next-generation IGBTs for rapidly evolving power electronics. They demand materials that can withstand higher temperatures, provide sustained electrical insulation and maintain dimensional stability under challenging environmental conditions such as humidity, dust and dirt. The laser-sensitive Ultramid Advanced N3U41G6 with non-halogenated flame retardant combines high thermal stability with low water uptake and excellent electrical properties. It is characterized by a high Comparative Tracking Index (CTI) of 600 (acc. to IEC 60112): This supports miniaturization of IGBTs by lower creepage and better insulation than materials so far used for power switches. The UL-certified grade shows an excellent electrical Relative Temperature Index (RTI) value of 150°C. 

IGBTs enable efficient switching and control of electrical circuits in power electronics. Semikron Danfoss, a global technology provider of power electronics, now uses the BASF PPA as housing in its Semitrans 10 IGBT, which can be installed in inverters of photovoltaic and wind energy systems. Explains Jörn Grossmann from research and predevelopment at Semikron Danfoss, “IGBTs are a key element of modern electronics, particularly in the renewable energy sector. IGBTs must operate at higher temperatures while maintaining long-term stability and performance. The Semitrans 10 has set a new benchmark for performance and efficiency benefiting from the unique properties of BASF’s PPA. We chose this material because of its extraordinary electrical isolation even in harsh environments and because of its excellent robustness against short-term temperature peaks in the assembly process.”

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